LOW TEMPERATURE VAPOR GROWTH STUDIES,
Abstract
With the completion of analyses of several germanium-iodine thermodynamic interactions and construction of a transport system based on the potential exhibited by the results for the germanium-hydrogen-iodine-helium equilibrium, studies of low temperature growth in the range 300-360 deg. were initiated. The main focus has thus far pertained to the pronounced orientation effects exhibited by single crystal deposits grown on single crystal substrates purposely misoriented in several crystallographic directions. During the pase period, automatic Bourdon Gauge studies were initiated on both the equilibrium and kinetic aspects of the Ge-Cl system. Studies of the effects of u. v. stimulated etching reactions have been started and indicate approximately a 64% enhancement of stimulated over non-stimulated etching rate when germanium chloride is carried past Ge single crystals in a He atmosphere. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1963
- Accession Number
- AD0433640
Entities
People
- A. Reisman
Organizations
- IBM Thomas J. Watson Research Center