PRODUCTION DEVELOPMENT OF A SILICON PLANAR EPITAXIAL TRANSISTOR WITH A MAXIMUM OPERATING FAILURE RATE OF 0.001% PER 1000 HOURS AT A CONFIDENCE LEVEL OF 90% AT 25 C.

Abstract

Efforts continued on a program to improve production techniques for the type 2N696 silicon epitaxial transistor. The power step-stress, operating life, and environmental testing of the Al-Al-Au metallization process are covered and the results compared with the older metallization processes. An acceleration factor was determined between step-stress levels and the level for which the .001%/1000 hours objective was established. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1963
Accession Number
AD0433710

Entities

People

  • Paul Greer

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Motion
  • Physical Properties
  • Production
  • Transistors

Readers

  • Inertial Navigation Systems.
  • Integrated Circuit Design and Technology.
  • Mathematics or Statistics