SEMICONDUCTOR MATERIALS.

Abstract

Preliminary tests on integrated GaAs and GaAs-GaP el diode arrays are reported. Work on material synthesis and structural investigation of boron phosphides was completed. Progress on material and device technology using GaAs-GaP alloy el diodes is described. Measurements of spectral distribution, absolute luminance and quantum yields are reported. Diodes fabricated from an alloy of 58% GaAs and 42% GaP produce 25-30 footlamberts with external photon/electron yield of 10 to the minus 5 power. This is obtained by applied voltages of less than 5v. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 26, 1963
Accession Number
AD0433725

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Advanced Materials
  • Compound Semiconductors
  • Electronics
  • Electrons
  • Elementary Particles
  • Engineered Materials
  • Luminance
  • Materials
  • Measurement
  • Photons
  • Plasmonic Materials
  • Quantum Yields
  • Semiconductors
  • Solid State Electronics
  • Subatomic Particles

Fields of Study

  • Materials science

Readers

  • Human-Computer Interaction (HCI).
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing