STUDIES OF MICROPLASMAS AND HIGH-FIELD EFFECTS IN SILICON

Abstract

A calculation of breakdown voltage is presented for various types of junctions using the most recent and probably the most accurate measurements available for electron and hole ionization rates. In addition, there is a calculation of multiplication at voltages less than the breakdown voltage. This calculation is useful to obtain the BV sub CE for n-p-n and p-n-p transistors. It is found that for similar collectors, the BV sub CE for an n-p-n transistor is about half the value for a p-n-p transistor.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1964
Accession Number
AD0433781

Entities

People

  • Chun-yuan Duh
  • John L. Moll

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Collisions
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Electron Energy
  • Electronics
  • Electronics Laboratories
  • Energy
  • Energy Bands
  • Long Wavelengths
  • Phonons
  • Scattering
  • Semiconductors
  • Solid State Electronics
  • Spectra
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Pulsed Power and Plasma Physics.
  • Unmanned Aerial System (UAS) Autonomous Capabilities and Mission Reconnaissance.

Technology Areas

  • Microelectronics