Vacuum Evaporated and Cathodic Sputtered Thin Films
Abstract
The effects of formation conditions on the epitaxial growth of thin films deposited by cathodic sputtering and vacuum evaporation are reported. The primary condition parameters considered are substrate temperature and rate of deposition. Trends have also been established for the effect of thickness, annealing and residual gas pressure. The results of a detailed investigation of Ge sputtered onto single crystal Ge, both [111] and [100], and [111]CaF2, are presented. Less detailed, but consistent results were obtained for identical film-substrate systems obtained by vacuum deposition. Data are also included for Ge deposited on single crystal Si, mica, amorphous quartz and glass. Other film-substrate systems considered include gold on rock salt and glass, silver on rock salt, and Si on Si.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1964
- Accession Number
- AD0433828
Entities
People
- B. Berson
- E. Krikorian
- Pengyu Chen
- R. J . Sneed
Organizations
- General Dynamics