DEVELOPMENT OF A LOW-NOISE MILLIMETER-WAVE PARAMETRIC AMPLIFIER.
Abstract
The theoretical values of optimum noise temperature and gain-bandwidth product for a one-port non-degenerate parametric amplifier are derived under completely general conditions. A set of universal design curves showing the noise temperature and gain-bandwidth product as functions of the ratio of signal and idler frequencies (with the ratio of the diode figure of merit and the signal frequency as a parameter) are included. Measurements taken on the epitaxial Ga As junctions, packaged in ceramic cartridges, indicate that the self-resonant frequency of this configuration is too low for use in a 94-Gc amplifier. Various mounting configurations for the unpackaged junction are being evaluated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1964
- Accession Number
- AD0434062
Entities
People
- D. Neuf
- J. Kliphuis
Organizations
- Control Data Corporation