AN L-BAND TUNNEL DIODE OSCILLATOR.
Abstract
Work continued on the development of distributed junction diodes. Annular junction diodes were successfully fabricated; however, higher carrier concentrations in the semiconductor material is needed to give lower diode capacitance and higher cut-off frequency. The second prototype oscillator model was delivered and the third prototype was tested and delivered. This third prototype oscillator gave a power output of 19 mw and easily met the = 2 Mc maximum frequency variation for = 10% chan.e in bias voltage.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1963
- Accession Number
- AD0434553
Entities
People
- D. E. Nelson
- E. T. Casterline
- R. Gold