MICROWAVE DIODE RESEARCH.
Abstract
Low-impedance circuits are being fabricated for an X-band tunnel diode amplifier. Minority carrier injection by so-called noninjecting contacts is discussed. It is shown that at high currents, the injection ratio (ratio of minority carrier current to total current) rises linearly with current, and can attain significant values. For example, a minority carrier injection ratio of about 5 per cent will be obtained at a current density of 350 amps/cm sq. in a 5-ohm-cm diode. The reason for this rise in injection ratio is that the minority carrier current is enhanced by a driftfield component much larger than the diffusion current which dominates at low bias. The precise amount of stored charge at high currents depends upon the characteristics of the epitaxial-substrate interface and can become very significant when the interface is highly reflecting (i.e. has low surface-recombination velocity). (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 10, 1964
- Accession Number
- AD0434573
Entities
People
- D. L. Scharfetter
- H. J. Fink
- R. L. Rulison