HIGH POWER SEMICONDUCTOR PHASE SHIFTING DEVICES.

Abstract

The general properties of the transmission phase shifter circuit mode are described, and analytic relationships are quoted which may be used for calculating phase shift and transmission match. A geometric description of both transmission phase states of the circuit is developed and used to define the accuracy of a convenient approximate formula for phase shift calculations. The results of an S-band experimental diode phase shifter yielding O to 22 degree phase shift in two 11 degree steps and having a peak RF burnout power capability of 37 kilowatts at 1 microsecond pulse length and 0.001 duty cycle are described in detail. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1964
Accession Number
AD0434747

Entities

People

  • Joseph F. White

Organizations

  • M/A-COM Technology Solutions

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accuracy
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Microsecond Time
  • Phase Shift
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Microwave Engineering.

Technology Areas

  • Microelectronics