EPITAXIAL VAPOR GROWTH OF III-V COMPOUNDS.

Abstract

This work describes an open-tube method for epitaxial growth of III-V compounds using heterogeneous, gas-solid chemical reactions. Different techniques and reactions are briefly discussed and a simplified model is exposed to a thermodynamic treatment to clarify how different parameters influence the growth process. The experimental apparatus and procedure are outlined and data are given for the growth of the two compound semiconductors, GaAs and GaP, as well as for the ternary GaAs(x)P(1-x) mixtures. Also mentioned is the fabrication of heterojunctions, the possibilities of doping, and closed-tube growth processes. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1963
Accession Number
AD0434756

Entities

People

  • James F. Gibbons
  • P. C. Prehn

Organizations

  • Stanford University

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Chemical Reactions
  • Compound Semiconductors
  • Electronics
  • Epitaxial Growth
  • Fabrication
  • Heterojunctions
  • Inorganic Carbon Compounds
  • Molecular Electronics
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Organic Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene