FAILURE MECHANISMS IN SILICON SEMICONDUCTORS.
Abstract
The surface studies show that there is motion of charge horizontally on the oxide covering planar silicon junctions. There is insignificant dipole action and diffusion through the oxide under normal operating conditions of such devices. The high field of the junction space charge layer is not necessary for the observed effects. Relations of oxide contact potential and device parameter changes are described. Reverse V-I characteristics are changed strongly by surface charge, which is measured by the Kelvin vibrating-condenser method. The problem of lateral thermal instability in silicon power transistors and its relationship to the second breakdown phenomenon was investigated further. Emphasis was put on those transistors which exhibited second breakdown at spots initially showing no elevated temperatures. The pathology of the damage produced by current concentrations was studied in more detail. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1964
- Accession Number
- AD0434762
Entities
People
- H. Queisser
- W. Hooper
- W. Schroen