STUDY OF COMPREHENSIVE FAILURE THEORY.
Abstract
Deposited film resistors formed from Evanohm condensate were observed to oxidize during exposure to high temperature; thinner films are observed to be more susceptible to oxidation damage. Oxidation does not occur by transfer of oxygen from the substrate to the metal film. Evidence supporting the presence of a precipitation process was also obtained. Oxidation kinetics were studied by depositing a film of the resistive material onto the surfaces of a quartz crystal and observing the change in frequency with time and temperature. A qualitative reliability model for diodes is described. This model facilitates the characterizing of failure mechanisms operative in these devices and is being used in studies of diffused junction diodes. Particular applicable failure mechanisms are briefly reviewed. Criteria for selection of a specific device are considered. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1964
- Accession Number
- AD0434794
Entities
People
- A. Horberg
- D. W. Levinson
- H. A. Lauffenburger
- M. E. Goldberg
- R. G. Stewart
Organizations
- IIT Research Institute