FAILURE MECHANISMS AT SURFACES AND INTERFACES.
Abstract
Analysis of the aging effects of thin film field effect devices, exposed to various temperatures in a dry argon atmosphere, with special emphasis on the transconductance g and the threshold voltage V, led to the following findings: (a) At 30 C both g and V are essentially invariant for more than 150 days. (b) At 76-121 C g remains constant to within 10-15%, while V reaches a new equilibrium value after from 10 days at 76 C to 3 days at 121 C. (c) The failure mechanism of (b) has been tentatively attributed to the desorption of water from the CdS-Si0 interfacial region. Demountable thin film field effect devices were developed for the rapid investigation of different types of dielectrics. The study of electrical stresses, slow surface states and changes thereof uncovered various novel effects. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1964
- Accession Number
- AD0435469
Entities
People
- D. L. Stock-man
- K. K. Reinhartz
- V. A. Russell
- W. J. Vander Grinten
- W. L. Willis
Organizations
- General Electric