PRODUCTION ENGINEERING MEASURE RELIABILITY IMPROVEMENT JET ETCH TRANSISTOR.
Abstract
It was found that the V subCE method of monitoring delineation was not completely adaptable to production. A new approach was therefore devised, and this approach, which utilizes the value of I sub cbo and shape of the breakdown curve, is described. The problem which led to a temporary increase in failure rate was solved. Data which confirm this solution and which also show the effect to centrifuging the transistors are presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1963
- Accession Number
- AD0435565
Entities
People
- J. H. D. Folster
- J. N. Edwards
- L. F. Ritterbush
- R. M. Gagne
Organizations
- Sprague Electric