HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS.

Abstract

Results of recent device evaluation indicate that silicon material remains the major problem. Large diameter crystals (1.25 in.) yielded poor results; it is therefore necessary to return to the smaller diameter (1.125 in.) material. The problems of high voltage yield and dv/dt adjustment are examined with respect to design and fabrication process. Results of devices fabricated on 1.250 in. crystal are reviewed. Electrical characteristics as required by the contract are reviewed and analyzed with respect to probable device appliecation. It may be desirable to emphasize some specific characteristics at the expense of others to maximize the usefulness of the device in applications. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1963
Accession Number
AD0436351

Entities

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Contracts
  • Diameters
  • Electronic Equipment
  • Fabrication
  • High Voltage
  • Materials
  • Power Converters
  • Rectifiers
  • Silicon Controlled Rectifiers
  • Test And Evaluation
  • Voltage

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering
  • Semiconductor Device Technology