HIGH SPEED POWER AMPLIFIER USING ELECTRON BEAM SWITCHED P-N JUNCTIONS.

Abstract

Electron beam multiplier (EBM) tubes were further developed to give a 10 ampere positive pulse at 300 volts for a bare junction silicon diode with heat sink. The beam current was in the order of 2 ma. at 20 KV. The current gain was thus 5,000. This was confirmed also by D. C. measurements at low current. The grid pulse was 1 microscecond in duration at 100 pps. These improvements were achieved mainly by modifications in processing to greatly reduce contamination of the diode. Electron gun development has given a 4.0 ma beam current at zero bias and a cut-off of -40 volts. Modifications of electron gun design are in progress to reduce the grid cut-off voltage by a factor of two. The heat sink for the diode was improved with a ceramic lead-in insulator to eliminate gas leakage trouble. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 14, 1964
Accession Number
AD0436595

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Contamination
  • Dielectrics
  • Electron Beams
  • Electron Guns
  • Electronic Equipment
  • Electrons
  • Heat Sinks
  • Measurement
  • P-N Junctions
  • Power Amplifiers

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Electronics Engineering

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics