PRODUCTION ENGINEERING MEASURES TO INCREASE TRANSISTOR RELIABILITY.
Abstract
The objective of this effort has been to evaluate and adopt proposed process improvements toward achieving a maximum failure rate of 0.01% per 1,000 hours at a 90% confidence level for the Silicon Triple Diffused Transistor Type 2N656. Test results continue to show that the process improvement work of the subject contract has indeed resulted in a highly reliable planar 2N656 transistor. Eleven hundred production planar devices are being placed on stress tests to confium the attainment of the contract objective. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1963
- Accession Number
- AD0436711
Entities
Organizations
- Texas Instruments