STUDY OF SURFACE STATES IN SEMICONDUCTORS.

Abstract

Surface states on GaAs have been studied by the pulsed field effect experiment. The surfaces under investigation were (111) surfaces, the so called A and B surfaces which are terminated by gallium and arsenic, respectively. With zincdoped P-type GaAs, a surface state was found to on the B surface 0.53 eV above the valence band with a capture cross-section for holes of about 3 x 10 -12th power sq, which is indicative of an acceptor state. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1964
Accession Number
AD0437344

Entities

People

  • G. Rupprecht
  • J. Gilbert
  • T. H. Bergeman

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Energy Bands
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds
  • Solid State Electronics
  • Valence
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene