INVESTIGATION OF TWO-CARRIER INJECTION ELECTROLUMINESCENCE,
Abstract
Injection electroluminescence starting at 1.35 volts has been found in physical inversion layers of metal-semiconductor contacts to n-type ZnSe crystals. N-type ZnTe crystals have electron mobilities of 340 sq. cm./bolt/sec at room temperature. Incorporation of rare-earth ions in II-VI crystals has been accomplished. A new materials combination for tunnel-injection-EL diodes has been devised. A unified theory of recombination kinetics via centers has been written which covers the excitation, quenching, and stimulation of luninescence and their relationship with photoconductivity and optical absorption. A model of nearest-neighbor-split luninescence levels in mixed crystals is presented which accounts in a really striking way for the peculiar emission spectra of Zn(S:Se)Ag. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 15, 1964
- Accession Number
- AD0437573
Entities
Organizations
- RCA Corporation