A 10-MW, X-BAND TUNNEL-DIODE OSCILLATOR.
Abstract
GaAs tunnel diodes with peak currents of 50 ma, junction capacitances of 4 pF and series resistances of 1.16 ohms were tested in stripline circuits and gave 1.0 mw of rf power at 8.5 Gc. Theoretical calculations indicate that this is close to optimum performance. One hundred ma tunnel diodes were fabricated and power outputs of 2.0 mw were obtained at 6.5 Gc. The theoretical analysis presented indicates that with proper loading, it is possible to get 3.6 mw at 8.5 Gc. Optimum loading conditions for this type of diode are therefore being investigated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1963
- Accession Number
- AD0438192
Entities
People
- Deborah J. Nelson
- E. Casterline
- E. Diamond
- R. Gold