The Transient Behavior of Transistors Due to Ionizing Radiation Pulses
Abstract
The detailed mechanism of secondary photocurrent generation in transistors due to short pulse of ionizing radiation is discussed quantitatively and the results of 0.2 microsecond flash x-ray experiments are explained. The dependences of the transient current pulse on transistor types, radiation dose, initial bias level, and external circuit impedance are presented. A possible equivalent circuit controlled by stored base charges is developed which makes it possible to predict more accurately the transient responses of many transistor circuits.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 15, 1962
- Accession Number
- AD0438264
Entities
People
- D. S. Gage
- G. H. Hanson
- R. S. Caldwell
Organizations
- Boeing