TRANSISTOR, VHF, SILICON, POWER (10W-500MC).
Abstract
A phosphorus oxychloride source is used for n type impurity diffusions, and an n-propyl borate, etch solution has been worked out for P type impurity diffusions. Gold and silver are being evaluated for over-the-oxide metallizing by evaporation. Difficulties in etching the metal between base and emitter stripes have been encountered due to the narrow spacing. A modified disc power package will be used in the fabrication of this device. Initial tests at 250 megacycles indicate good performance. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1963
- Accession Number
- AD0439230
Entities
People
- J. Crishal
- R. Neville