THEORETICAL BANDWIDTH LIMITATIONS IN UHF PARAMETRIC AMPLIFIERS AND CONVERTERS,

Abstract

This work is devoted to finding the bandwidth or gain-bandwidth limits of parametric amplifiers and converters haeing a single linear-time-variant (LTV) element. The limits include the effects of all the important parasitic elements of the LTV device, such as lead inductance and series resistance. The limits are applicable to a wide variety of devices, including microwave crystal diodes, tunnel diodes, p-n junction capacitors, metal-oxide-salicon capacitors, many LTV inductors, and most other two-terminal LTV devices. The limits are found for lower- and upper-sideband converters and negative resistance amplifiers with fixed pump frequency; the bandwidth limits for the upper-sideband tunable converter are also derived. As a bonus, certain design criteria result from the formulation of the bandwidth limits; these criteria prove useful in the design of practical wideband converters and amplifiers. Several examples of wideband converter designs illustrate use of the design criteria; experimental results agree very well with the theoretical predictions. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1962
Accession Number
AD0441213

Entities

People

  • P. O. Scheibe

Organizations

  • Stanford University

Tags

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Capacitors
  • Converters
  • Design Criteria
  • Diodes
  • Frequency
  • Frequency Bands
  • Metal Oxides
  • P-N Junctions
  • Parametric Amplifiers
  • Resistance
  • Sidebands
  • Tunnel Diodes

Readers

  • Electrical Engineering
  • Electronics Engineering