HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS.

Abstract

Testing facilities for evaluation of thermal impedance, peak forward drop and 10,000 amperes surge current are described. Transmission electron microscope study on materials under the influence of processing was used to assist process control. Effects of crystal materials on junction characteristics are described. The studies confirm the use of 1.125-inch diameter material as the best choice for the state-of-the-art development. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1964
Accession Number
AD0442070

Entities

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Buildings And Structures
  • Diameters
  • Electron Microscopes
  • Electrons
  • High Voltage
  • Impedance
  • Materials
  • Microscopes
  • Rectifiers
  • Silicon Controlled Rectifiers
  • Test And Evaluation
  • Voltage

Fields of Study

  • Materials science

Readers

  • Explosive Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene