OPTICAL ABSORPTION AND PHOTOLUMINESCENCE OF DOPED GAAS AND (INXGA1-X)AS,
Abstract
Absorption coefficients near the fundamental absorption edge have been measured in P-type and N-type GaAs with various doping concentrations. With the aid of the principle of detail balance, these measurements were used to predict the spectra of spontaneous emissions under small excitations, and actual photoluminescence spectra were found to follow the predicted spectra closely. The photoluminescence spectra of Mndoped GaAs at several different temperatures were studied. Indium was diffused into doped GaAs to modify the band-gap energy. The photoluminescence spectra and absorption coefficients of the diffused layers were measured. The photoluminescence of the diffused layer was found to be shifted in wavelength by an amount consistent with the indium surface concentration. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1964
- Accession Number
- AD0442491
Entities
People
- Chung M. Chang
Organizations
- Stanford University