GALLIUM ARSENIDE SURFACE STATES,

Abstract

Pulsed field effect measurements were performed under atmospheric conditions on GaAs (111) surfaces prepared by various treatments. The results obtained with A and B (111) surfaces of n and p-type GaAs are summarized. Only the surface states with time constants between 0.00001 and 0.001 sec. could be determined under the experimental conditions used. The temperature range employed was 240 to 370 K. The density of the surface states could only be determined approximately and was found to be 10 to the 10th to 10 to the 11th power per sq cm. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1964
Accession Number
AD0442564

Entities

People

  • Shinji Kawaji

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Elements
  • Gallium
  • Gallium Arsenides
  • Group 13 Elements
  • Measurement
  • Metals
  • Post-Transition Metals

Fields of Study

  • Physics

Readers

  • Ocean-Atmosphere Mesoscale Modeling, Data Assimilation, and Flux Boundary Layers
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene