GAAS LASER MATERIALS STUDY.

Abstract

In this report further evidence of crystal defect striations from infrared transmission microscopy is presented. The origin of the striae in Czochralski pulled crystals was traced to the uneven motion of the seed holder as a consequence of the magnetic pulling mechanism. In support of the goal of higher power, higher temperature operation a study of the temperature dependence of laser parameters such as grain per unit length, loss per unit length and threshold current density was undertaken and the results are presented. The effect of competing deep lying recombination centers i.e. Cu was studied. The advantages are explored for the ultimate device objectives of different fabrication techniques such as traveling solvent growth, and combined vapor growth and diffusion techniques for p-n-n structures. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 31, 1964
Accession Number
AD0442598

Entities

People

  • H. Rupprecht
  • W. J. Turner

Organizations

  • IBM Thomas J. Watson Research Center

Tags

DTIC Thesaurus Topics

  • Crystal Defects
  • Crystals
  • Current Density
  • Diffusion
  • Fabrication
  • Laser Materials
  • Materials
  • Microscopy
  • Optical Materials
  • Striations

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Materials Science and Engineering.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition