LOW-POWER THIN-MAGNETIC-FILM MEMORY.
Abstract
This study was initiated to determine the feasibility of fabricating circuitry which would be compatible with the low-power, thin-film, 4-by-4, memory array. For this study, the size of the memory was increased to a 64-by-24 array with the same basic operational characteristics as the 4-by-4 array. A complete memory system was developed around the 64-by-24 array. It includeincluded bit and word drivers, a selection matrix, sense amplifier circuits, and the memory array. The circuits are small enough in size to eliminate any requirements for a geometric fanout from the memory array, and they are electronically compatible with the array. The basic memory signal of 500 microvolts is amplified to a level of 0.75 volts. This voltage level is sufficient to drive a standard molecular-circuit data register. With the exception of the transistors in each circuit, the circuits are fabricated completely by evaporation techniques. The transistors are in chip form. Gold wires 0.7 mils in diameter are used for interconnections. The results of this contract demonstrated that a memory system can be fabricated by a continuous process and that the fabrication of the memory array and its associated circuitry can be done with compatible techniques. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1964
- Accession Number
- AD0443217
Entities
People
- T. J. Matcovich