HIGH EFFICIENCY TRANSISTOR STRUCTURES.
Abstract
This report describes the development, design and fabrication of micropower silicon integrated circuits, using both planar transistor technologh and thin-film technology. Techniques and developmental approaches for Induced-channel Field-Effect Transistors, Diffused Field-effect Development, and Bi-polar Transistors are described. A discussion on the development of Nichrome Thin-film Resistors, Aluminum-Silicon Dioxide Resistors, Mo-Ta Resistors, Lead-Glass Capacitors, Silicon Monoxide Capacitors, Silicon Dioxide Capacitors, and Titanium Dioxide Capacitors is presented. The circuit designs with Channel FET, Diffused Field-effect, and Small Geometry Bi-polar Transistors are outlined. A thorough discussion of the Small Area Bi-polar transistor - the device considered best suited for the digital network is presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1964
- Accession Number
- AD0443258
Entities
People
- Edwin Shuey
- Scot Clark
- Stanley Holcomb
Organizations
- Texas Instruments