IMPURITY PROFILE IN THE OXIDE REGION.
Abstract
The diffusion of impurities into silicon through an oxide layer was analyzed theoretically to include the effects of oxide growth during diffusion. The problem was reduced to computer programs. Experimental studies of the diffusion of phosphorus by radioactive tracer methods showed that the diffusivity of phosphorus in the oxide is concentration-dependent for concentrations above 10 to the 20th power cm3. It was also found that impurity distributions near the surface of the oxide may be considerably changed by water and acid treatments. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 15, 1964
- Accession Number
- AD0443869
Entities
People
- F. E. Battocletti
- M. O. Thurston
Organizations
- Ohio State University