C- AND KU-BAND SEMICONDUCTOR TR DEVICES

Abstract

This report was performed on the C-band portion. All work performed on the Ku-band investigation was concerned with full height Ku-band waveguide diode mounts. PIN and varactor diodes were measured using forward DC bias to simulate high power isolation and zero bias to provide the low loss condition. Additional work was carried out utilizing high burn out crystal detectors to provide the forward bias for the PIN and the varactor during high power tests. High power tests during this quarterly interval resulted in the successful operation of a two stage switched limiter. Operational data is given for peak powers up to 1,000 watts.

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1964
Accession Number
AD0445031

Entities

People

  • R. H. Brunton

Organizations

  • M/A-COM Technology Solutions

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Detectors
  • Diodes
  • Electrical Properties
  • Electronic Components
  • Electronics
  • Electronics Laboratories
  • Frequency
  • Insertion Loss
  • Ku Band
  • Losses
  • Military Research
  • New Jersey
  • Peak Power
  • Semiconductors
  • Varactor Diodes

Readers

  • Electronics Engineering

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems