THIN FILM IMAGE CONVERTER.
Abstract
Electrical contacts to n-GaAs have been prepared by electroless Ni plating, Pt sputtering in an argon atmosphere, and ultrasonic soldering. The influence of heat treatment under vacuum and electrical ''forming'' upon the current-voltage characteristics has been investigated. It has been found possible to produce ohmic contacts by several of these methods. The intensity of electroluminescent emission from GaP as a function of injection current has been studied at 300 deg. K and 195 deg K. At low current densities the intensity is proportinal to the square of the current. As2S3 and CdS aplanatic hyperhemispheres have been mounted on a GaP diode, using an immersion oil. The external quantum efficiency increased by a factor of 1.3 to 2.6. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 20, 1964
- Accession Number
- AD0446867
Entities
People
- Fred C. Pribble
- Paul W. Kruse
Organizations
- Honeywell International, Inc.