DEVELOPMENT OF EPITAXIAL TECHNOLOGY FOR MICROELECTRONICS AND LARGE AREA DEVICE APPLICATION.
Abstract
Continued study of oxide-masked selective epitaxial growth has resulted in a = 20% variation in thickness in windows of uniform size and shape. 'In-Situ' CO2 oxidation work has been suspended. X-ray techniques used to study epitaxial growth have resulted in indications of structural perfection which can be correlated with good integrated circuit performance. Variables have been studied and results analyzed for the rotating susceptor furnace. Epitaxial material has been used to fabricate high quality devices such as high voltage, large area diode junctions, integrated circuits with PNP and NPN transistors on the same chip and PNPN matrix structures. Dielectric barrier isolation techniques are being investigated. Growth of silicon on several insulating substrates has been studied, and results and theory are discussed in this area. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1964
- Accession Number
- AD0447086
Entities
People
- J. P. Defandorf
- J. Porter
- Pingshan Wang
Organizations
- Sylvania Electric Products