THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS.

Abstract

Reactively sputtered thin films of tantalum oxide have been deposited onto thermally oxidized single crystal silicon. Either resistive or dielectric films result by control of oxygen partial pressure. Resistors have been made offering 6.7 to 67 megohms/sq in and TCR values + 144 to + 700 ppm/degree C. Capacitors have V sub bd of 64 to 8 volts with 0.23 to 2.61 mF/ sq in respectively, and TCC of + 183 to + 404 ppm/ degree C. Contact metals and photolithographic techniques were developed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1964
Accession Number
AD0447222

Entities

People

  • Coy D. Orr
  • R. Scot Clark

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitors
  • Crystals
  • Dielectric Films
  • Electrochemical Reactions
  • Films
  • Metals
  • Partial Pressure
  • Resistors
  • Single Crystals
  • Tantalum
  • Thin Films

Readers

  • Mathematics or Statistics
  • Thin Film Deposition Science.