PULSING AND CROSSTALK STUDIES IN SEMICONDUCTOR CIRCUITS.
Abstract
This report presents the results of a study program which was undertaken to investigate the R.F. pulse power handling capabilities of VHF silicon planar transistors. The basic design factors that limit the peak R.F. pulse power capability are described in detail. Measuring circuits and techniques are developed which will enable the necessary device parameters to be determined. A method is developed to predict the peak R.F. pulse output power for the transistors of interest. This method, in conjunction with the basic limiting design factors, is then utilized to develop a step by step design procedure. This procedure is presented in a systematic manner such that a designer may use the device predictions to design circuits capable of producing the pulse powers predicted. Experimental results are given to illustrate and verify the techniques and predictions, respectively. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 14, 1964
- Accession Number
- AD0447447
Entities
People
- John W. Lunden
Organizations
- General Electric