A STUDY OF RED PHOTOLUMINESCENCE IN GALLIUM PHOSPHIDE CRYSTALS,
Abstract
The purpose of this study was to increase knowlecge of the red photoluminescencecenters in GaP crystals. It was found that: (1) redphotoltminescencecenters may be created in GRAP crystals by doping the nonluminous GaP vith any one of the following elements: Zn, Te,Cd, Au, Cu, In, Al, Mn, S, Si, Se, and MKG; (2) tge wavelength (or energy) and intensity of the red photoluminescence peak created in GaP crystals are dependent on ilpurity-doping concentration; (3) no absorption band corresponding to the red photoluminescence peak was observed in luminous GaP crystals; (4) heat treatment of GaP crystalslin vacuum at temperatures about 700 C destroyed the red photoluminescence. Because of the difficulty in growing hig;-quality, large-size GaP single crystals, the results of this investigation are mostly qualitative. They do serve, however, as a guide to a bett r understanding of red phtoluminescence centers in GaP crystals. The crystal def cts, associated with vacancies or impurities, may be responsible for the red photolumanescence centers in GaP. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1964
- Accession Number
- AD0449378
Entities
People
- Bevan P. F. Wu
Organizations
- Stanford University