METAL BASE TRANSISTOR.

Abstract

The purpose of this work was to evolve an active solid-state thin-film electronic device with usable power gain, based on the transport of hot electrons across a thin metal-base film, the electrons being injected into the metal base film by means of a Schottky barrier. Electrical measurements and electron micrographs show that the properties of thin evaporated gold films are independent of deposition rate in the range studied (5 to 125 angstroms) and depend only on thickness, Unannealed films having thicknesses ranging down to 100 angstroms deviations from bulk electrical properties which can be explained in terms of surface reflection of electrons. Below 100 angstroms the films agglomerate and become descontinuous. Annealing of the gold film causes agglomeration. Island formation in films sandwiched between zinc sulfide layers is as severe as in uncoated films, but in the former case, narrow bridges of gold are found connecting the islands. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 15, 1964
Accession Number
AD0451004

Entities

People

  • Walter Kane

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electrical Measurement
  • Electrical Properties
  • Electrons
  • Films
  • Measurement
  • Power Gain
  • Semiconductor Devices
  • Semiconductors
  • Thickness
  • Thin Films
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene