ENGINEERING SERVICES ON TRANSISTORS.
Abstract
Planar germanium transistors were fabricated and encapsulations were made in two header types. Microwave measurements are presented on a transistor of structural designNo. 2. DC Beta's of 40 to 50 and rf power gains of 10 to 15 db at 2 Gc were obtained. A few transistors with micron spacings were encapsulated. A brief review of this work is also presented. A generalized cost-size relationship is derived for a monolithic circuit consisting of N identical components, taking into account variations in component density, yield, and assembly costs with 2n. the discussion, intended to reveal cost trends rather than give accurate results for specific cases, deals only with fabrication costs. It is found that the ratio of circuit cost per component to cost of discrete transistor is minimum at a chip size which is determined primarily by the spot-defect density on the device. 99author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1964
- Accession Number
- AD0451133
Entities
People
- B. T. Murphy
- J. Kocsis
- R. L. Pritchett