THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS.
Abstract
The purpose of this investigation is the development of techniques for fabricating thin conductive, resistive and dielectric films, by complete or partial oxidation of a suitable metallic film deposited in predetermined patterns and sequences on an insulating substrate. The substrate is primarily an oxidized silicon semiconductor network bar containing diffused active elements. Reactively sputtered thin films of tantalum oxide offer sheet resistivities of 27 to 25,400 ohms/square and TCR values of -3 to -1,280 ppm/C; or dielectric films of 0.30 to 3.16 pF/sq mil and Vbd of 82 to 8 volts, respectively, and TCC of +129 to +269 ppm/C. Process variables including time, current, gas flow, pressure, and temperature were investigated. Contact metals and photolithographic techniques were developed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1964
- Accession Number
- AD0451730
Entities
People
- Coy D. Orr
Organizations
- Texas Instruments