ALL-EVAPORATED AND MASKLESS FABRICATION TECHNIQUES FOR ACTIVE DEVICES.
Abstract
The silicon evaporation fixtures were completed and a single run of silicon evaporations was made. The deposited silicon films were evaluated by optical microscopy and by chemical etching. The films are onocrystalline, but contain defects. The origin of the defects is discussed. A CALCULATION OF THE EVAPORATION PARAMETERS IS GIVEN. The ion generator is 90% complete. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 09, 1964
- Accession Number
- AD0453346