THIN-FILM POLYCRYSTALLINE FIELD-EFFECT TRIODE.
Abstract
The microstructure and electrical characteristics of cadmium sulfide films were studied as a function of substrate temperature, film thickness, and deposition rate. Physical factors which were examined included film stress, film roughness, crystallite size, and degree of preferred orientation. Electrical properties studied included Hall mobility, resistivity, and performance in TFT structures. A simple electrical method of measuring the semiconductor doping density in thin-film structures was devised. TFT's using indium antimonide films as the semiconductor were shown to operate by field-effect control of either electrons or holes. Cadmium selenide TFT's having good performance were prepared by evaporation of all constituents in a single vacuum upon a substrate held at room temperature. Fabrication facilities were constructed for producing twelve TFT's on one substrate with an evaporated overcoat and undercoat to improve uniformity and life. A 0.2-mil wire mask in contact with the glass is expected to produce smaller source-drain spacing and higher performance than has been obtained previously. A test facility was constructed for life-testing a group of 14 TFT's under various conditions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1965
- Accession Number
- AD0455972
Entities
People
- J. J. Bowe
- P. K. Weimer
- R. L. Schelhorn
- V. L. Frantz
- W. H. Laznovsky
Organizations
- Sarnoff Corporation