GAAS LASER DIODES.
Abstract
Device development and laser diode fabrication are described. Experimental work, aimed at improved laser performance, was concentrated primarily on diffusion experiments and methods of increasing electrical and thermal contract resistance. Procedures were established for guarantying a junction flatness of = 0.05 micron, and a bonding technique developed which enables electrical contact resistivities of less than 5 x 10 to the -5th power ohm sq. cm. A new laser geometry was tested, and a fabrication technique developed. The 20 laser diodes assembled and delivered were mounted on a coaxial copper heat sink. The fabrication and test methods utilized in this work are outlined. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1964
- Accession Number
- AD0456022
Entities
People
- R. A. Sehr
- W. J. Rundle