NON-VACUUM DEPOSITION TECHNIQUES FOR USE IN FABRICATING THIN FILM CIRCUITS

Abstract

The causes of instability of gas plated tin oxide resistors have been investigated. It has been found that the nature of the ambient tin oxide interface is the controlling factor which determines the electrical properties of thin (less than 1000 A) resistor films. High temperature stress test has shown that protection of the tin oxide interface by an encapsulating dielectric film is successful in stabilizing the electrical properties of the thin film resistors. A method for the delineation of tin oxide resistors and other hard to fetch materials is described.

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Document Details

Document Type
Technical Report
Publication Date
Jan 15, 1965
Accession Number
AD0456793

Entities

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Carbon Monoxide
  • Carbonyl Complexes
  • Chemical Synthesis
  • Chemistry
  • Dielectric Films
  • Dielectric Gases
  • Dielectric Permittivity
  • Dielectric Properties
  • Dielectrics
  • Dissipation Factor
  • Electrical Properties
  • Materials
  • Materials Science
  • Measurement
  • Oxide Films
  • Test Equipment

Fields of Study

  • Engineering

Readers

  • Thin Film Deposition Science.