A 10-MW, X-BAND TUNNEL-DIODE OSCILLATOR.
Abstract
Tunnel-diode oscillators were developed for XBand. Each oscillator contained a single diode in a low inductance package, and delivered between 2 and 2 and 1/2 milliwatts of rf power. Three and one half milliwatts were obtained in initial experiments with two oscillators operating in parallel. It appears that power outputs up to 5 mw are possible with this technique. Diode technology was improved to the point where speed ratios (Ip/c) of up to 100:1 were obtained with corresponding cutoff frequencies up to 30 Gc. A theoretical analysis was developed which allows one to determine the power that may be expected from a tunnel-diode with given characteristics. The validity of the theory was established by comparison with experimental results. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1964
- Accession Number
- AD0458145
Entities
People
- Deborah J. Nelson
- E. Casterline
- E. Diamond
- R. Gold