THIN-FILM POLYCRYSTALLINE FIELD-EFFECT TRIODE.
Abstract
The effect of substrate temperature and deposition rate on the surface topology and crystallite size of CdS films has been studied by electron microscopy. Hall mobility and resistivity of CdS films have been determined as a function of temperature for various evaporation, processing, and over-coating procedures. Capacitance-voltage data on metal-insulator-CdS capacitors are being taken in conjunction with bias-temperature treatments in order to investigate sources of insulator instability. High-temperature materials are being tested for TFT insulators. New materials and techniques for encapsulation of TFT's by means of an evaporated overcoat have been investigated. Reproducibility studies are being carried out with particular attention to substrate condition, cadmium sulfide film preparation, and masking jig design. Facilities and procedures for testing TFT's have been improved. Experimental TFT's using InSb and CdSe are being investigated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1965
- Accession Number
- AD0460756
Entities
People
- H. Borkan
- J. J. Bowe
- P. K. Weimer
- R. S. Hopkins Jr.
- V. L. Frantz
Organizations
- Sarnoff Corporation