THIN FILM IMAGE CONVERTER.
Abstract
Evaluation of the electrical properties of n-GaAs on p-Ge epitaxial layers has continued. By studying the influence of substrate resistivity upon the current-voltage characteristics, it has been determined that a p-n junction is formed in the Ge during growth on layers whose resistivity is greater than 0.002-0.004 ohm-cm. Diffusion of Zn into the GaAs epitaxial layers failed to produce good rectification characteristics. Spectrographic analysis, together with Hall and resistivity measurements, revealed the GaAs layers to contain an extremely high concentration of Ge. Initial steps taken to grow epitaxial layers of Ge on GaAs have met with little success. An analysis of the resolution limitation of the TFIC caused by lateral current flow in the p-Ge layer revealed that acceptable resolution can be obtained at 0.2 v forward bias. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 20, 1965
- Accession Number
- AD0461567
Entities
People
- Fred C. Pribble
- Harley Cohen
- Paul W. Kruse
- Richard G. Schulze
Organizations
- Honeywell International, Inc.