Hall Measurements of Thin Layers of Semiconductors

Abstract

Hall measurements on thin films via a four-point probe method are described. Basic formulas are derived for an infinite sheet. Modifications of the infinite-sheet formula to correct for boundary conditions imposed by real, finite samples are discussed. Experimental evidence is presented which verifies the theory.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1965
Accession Number
AD0464812

Entities

People

  • Alfred E. Attard

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors
  • Weapons Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Boundaries
  • Contracts
  • Electric Fields
  • Electronics
  • Electronics Laboratories
  • Equations
  • Films
  • Magnetic Fields
  • Materials
  • Michigan
  • Military Research
  • Semiconductors
  • Thin Films
  • United States
  • Universities

Readers

  • Calculus or Mathematical Analysis
  • Fluid Mechanics and Fluid Dynamics.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene