TRANSISTOR, FIELD EFFECT, INSULATOR GATE, 100-MC AMPLIFIER.
Abstract
Efforts were continued on a program to develop and evaluate a metal oxide semiconductor (MOS) field effect transistor for use as an R-F stage with low power dissipation in the front end of a VHF amplifier. Work was directed toward the fabrication, development of associated processes, and evaluation of the Tetrode MOS. Developmental work was done on fabrication techniques which minimize center point capacitance and increase gate and drain breakdown. The present 100-MC Tetrode devices yield average power gains of 18db and noise figures of about 3db when operated at IDS = 2ma and VDS = 6 volts. The average gate breakdown is 85 volts with drain breakdown voltages greater than 15 volts. The transconductance of these units averages 2500 microns mhos. Typical AGC performance yields a 40db attenuation range with excellent dynamic signal swing and very low cross modulation over the entire range. Areas for futher work are diffusion techniques, contact metalization and channel oxides. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1965
- Accession Number
- AD0466136
Entities
People
- M. Mitchell
- R. Dawson