DESIGN PARAMETERS AND PROCEDURES FOR FUNCTIONAL ELECTRONIC STRUCTURES.
Abstract
Experimental and theoretical research on silicon integrated device structures and on the elements of these structures is discussed. Included are a description of oxide film thickness measurement apparatus, data on low temperature silicon oxidation rates, observations on the dependence of oxide growth rate on phosphorus concentration in the silicon, and theoretical treatment of field effect transistor characteristics. The series of reports on Integrated Silicon Device Technology is described and their status given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1965
- Accession Number
- AD0469962
Entities
Organizations
- RTI International