ALL-EVAPORATED AND MASKLESS FABRICATION TECHNIQUES FOR ACTIVE DEVICES.

Abstract

Efforts were continued on a program to develop techniques for a system of microelectronics which is fully evaporated and which maintains the advantages of the present integrated circuitry. The program has the following two objectives: the controlled deposition of epitaxial silicon films by vacuum evaporation, and the development of an ion generation focusing and deflection system for selective doping of the silicon films. The feasibility of creating well defined p-n junctions by indium ion bombardment has been demonstrated. Platinum has been substituted for oxidized tungsten as the contact ionizer. This has resulted in an improved deposition, yielding diodes of high breakdown voltage. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 27, 1965
Accession Number
AD0470481

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Deflection
  • Demographic Cohorts
  • Electronics
  • Elements
  • Evaporation
  • Fabrication
  • Ion Bombardment
  • Metals
  • Microelectronics
  • P-N Junctions
  • Platinum
  • Transition Metals
  • Tungsten

Readers

  • Electronics Engineering
  • Nanofabrication and Microfabrication.
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene